JAN2N6299P
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- Mfr.Part #
- JAN2N6299P
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 4,531
- In Stock ：
- 4,531
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 64 W
- Product Status :
- Active
- Series :
- -
- Product Category :
- Microchip Technology
- Package / Case :
- TO-213AA, TO-66-2
- Current - Collector Cutoff (Max) :
- 500μA
- Supplier Device Package :
- TO-66 (TO-213AA)
- Operating Temperature :
- -65°C ~ 175°C (TJ)
- Current - Collector (Ic) (Max) :
- 8 A
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 4A, 3V
- Frequency - Transition :
- -
- Transistor Type :
- PNP - Darlington
- RoHS :
- N
- Package :
- Bulk
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 80mA, 8A
- Manufacturer :
- Microchip
- Brand :
- Microchip / Microsemi
- Datasheets
- JAN2N6299P
PNP - Darlington -65°C ~ 175°C (TJ) 500μA TO-213AA, TO-66-2 Through Hole
JAN2N6299P Overview
In this device, the DC current gain is 750 @ 4A, 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 80mA, 8A.Supplier device package TO-66 (TO-213AA) comes with the product.The device exhibits a collector-emitter breakdown at 80 V.
JAN2N6299P Features
the DC current gain for this device is 750 @ 4A, 3V
the vce saturation(Max) is 2V @ 80mA, 8A
the supplier device package of TO-66 (TO-213AA)
JAN2N6299P Applications
There are a lot of Microchip Technology
JAN2N6299P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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