JAN2N6299
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- Mfr.Part #
- JAN2N6299
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 8A TO213AA
- Stock
- 3,134
- In Stock ：
- 3,134
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 4A 3V
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Operating Temperature :
- -65°C~175°C TJ
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 4MHz
- Collector Base Voltage (VCBO) :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e0
- Polarity :
- PNP
- JESD-30 Code :
- O-MBFM-P2
- Current - Collector Cutoff (Max) :
- 500μA
- Collector Emitter Saturation Voltage :
- 2V
- Contact Plating :
- Lead, Tin
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 16mA, 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Form :
- PIN/PEG
- Transistor Type :
- PNP - Darlington
- Terminal Position :
- BOTTOM
- Pbfree Code :
- No
- Pin Count :
- 3
- Series :
- Military, MIL-PRF-19500/540
- Packaging :
- Bulk
- Power - Max :
- 64W
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 22 Weeks
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Package / Case :
- TO-213AA, TO-66-2
- Qualification Status :
- Qualified
- Published :
- 2007
- Current - Collector (Ic) (Max) :
- 8A
- Collector Emitter Voltage (VCEO) :
- 80V
- Element Configuration :
- Single
- Number of Elements :
- 1
- Datasheets
- JAN2N6299
PNP - Darlington -65°C~175°C TJ 500μA 1 Elements 2 Terminations SILICON TO-213AA, TO-66-2 Bulk Through Hole
JAN2N6299 Overview
DC current gain in this device equals 750 @ 4A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 16mA, 4A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 4MHz.
JAN2N6299 Features
the DC current gain for this device is 750 @ 4A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 16mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz
JAN2N6299 Applications
There are a lot of Microsemi Corporation
JAN2N6299 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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