JAN2N6284

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Mfr.Part #
JAN2N6284
Manufacturer
Microchip Technology
Package / Case
TO-3
Datasheet
Download
Description
TRANS NPN DARL 100V 20A TO3
Stock
10,342
In Stock :
10,342

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Packaging :
Bulk
Mounting Type :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mount :
Through Hole
Pbfree Code :
No
Terminal Form :
PIN/PEG
Element Configuration :
Single
Transistor Element Material :
SILICON
Collector Emitter Saturation Voltage :
3V
DC Current Gain (hFE) (Min) @ Ic, Vce :
1250 @ 10A 3V
Operating Temperature :
-65°C~200°C TJ
Published :
2007
Contact Plating :
Lead, Tin
Collector Base Voltage (VCBO) :
100V
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time :
22 Weeks
Case Connection :
COLLECTOR
Pin Count :
2
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminations :
2
Transistor Type :
NPN - Darlington
Series :
Military, MIL-PRF-19500/504
Emitter Base Voltage (VEBO) :
7V
Current - Collector Cutoff (Max) :
1mA
Polarity :
NPN
Qualification Status :
Qualified
Package / Case :
TO-3
ECCN Code :
EAR99
Collector Emitter Voltage (VCEO) :
100V
JEDEC-95 Code :
TO-204AA
Transistor Application :
SWITCHING
Terminal Finish :
Tin/Lead (Sn/Pb)
Current - Collector (Ic) (Max) :
20A
Power - Max :
175W
RoHS Status :
Non-RoHS Compliant
Transition Frequency :
4MHz
JESD-30 Code :
O-MBFM-P2
JESD-609 Code :
e0
Number of Elements :
1
Terminal Position :
BOTTOM
Vce Saturation (Max) @ Ib, Ic :
3V @ 200mA, 20A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
JAN2N6284
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N6284 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-65°C~200°C TJ, Number of Terminations:2, Package / Case:TO-3, JAN2N6284 pinout, JAN2N6284 datasheet PDF, JAN2N6284 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N6284 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN - Darlington -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-3 Bulk Through Hole

JAN2N6284 Overview


In this device, the DC current gain is 1250 @ 10A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 3V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 200mA, 20A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.

JAN2N6284 Features


the DC current gain for this device is 1250 @ 10A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz


JAN2N6284 Applications


There are a lot of Microsemi Corporation
JAN2N6284 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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