JAN2N6283

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Mfr.Part #
JAN2N6283
Manufacturer
Microchip Technology
Package / Case
TO-3
Datasheet
Download
Description
TRANS NPN DARL 80V 20A TO3
Stock
49,354
In Stock :
49,354

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-3
Current - Collector Cutoff (Max) :
1mA
Terminal Position :
BOTTOM
Current - Collector (Ic) (Max) :
20A
DC Current Gain (hFE) (Min) @ Ic, Vce :
1250 @ 10A 3V
Packaging :
Bulk
Transistor Type :
NPN - Darlington
Power - Max :
175W
JEDEC-95 Code :
TO-204AA
Collector Emitter Saturation Voltage :
3V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Factory Lead Time :
22 Weeks
Contact Plating :
Lead, Tin
Pin Count :
2
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
80V
Terminal Finish :
Tin/Lead (Sn/Pb)
RoHS Status :
Non-RoHS Compliant
Number of Terminations :
2
Emitter Base Voltage (VEBO) :
7V
Pbfree Code :
No
Operating Temperature :
-65°C~200°C TJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Element Configuration :
Single
Collector Emitter Voltage (VCEO) :
80V
Terminal Form :
PIN/PEG
Number of Elements :
1
Case Connection :
COLLECTOR
Series :
Military, MIL-PRF-19500/504
JESD-30 Code :
O-MBFM-P2
Mounting Type :
Through Hole
Qualification Status :
Qualified
Polarity :
NPN
Transistor Application :
SWITCHING
Lifecycle Status :
IN PRODUCTION (Last Updated: 4 weeks ago)
Transition Frequency :
4MHz
Vce Saturation (Max) @ Ib, Ic :
3V @ 200mA, 20A
ECCN Code :
EAR99
JESD-609 Code :
e0
Datasheets
JAN2N6283
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N6283 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3, Number of Terminations:2, Operating Temperature:-65°C~200°C TJ, Mounting Type:Through Hole, JAN2N6283 pinout, JAN2N6283 datasheet PDF, JAN2N6283 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N6283 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN - Darlington -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-3 Bulk Through Hole

JAN2N6283 Overview


DC current gain in this device equals 1250 @ 10A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 3V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 200mA, 20A.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 4MHz.

JAN2N6283 Features


the DC current gain for this device is 1250 @ 10A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz


JAN2N6283 Applications


There are a lot of Microsemi Corporation
JAN2N6283 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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