JAN2N6251T1

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Mfr.Part #
JAN2N6251T1
Manufacturer
Microsemi
Package / Case
TO-254-3, TO-254AA (Straight Leads)
Datasheet
Download
Description
TRANS NPN 350V 10A TO254AA
Stock
36,303
In Stock :
36,303

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Manufacturer :
Microsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
Qualified
Collector Base Voltage (VCBO) :
450V
Mounting Type :
Through Hole
Max Collector Current :
10A
Series :
Military, MIL-PRF-19500/510
Collector Emitter Voltage (VCEO) :
350V
Current - Collector Cutoff (Max) :
1mA
RoHS Status :
Non-RoHS Compliant
Current - Collector (Ic) (Max) :
10A
Pin Count :
3
Packaging :
Bulk
Number of Terminations :
3
Terminal Form :
PIN/PEG
Mount :
Through Hole
HTS Code :
8541.29.00.95
Number of Elements :
1
Operating Temperature :
-65°C~200°C TJ
Number of Pins :
3
Transistor Type :
NPN
Terminal Position :
Single
Radiation Hardening :
No
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 1.67A, 10A
Pbfree Code :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
6 @ 10A 3V
Configuration :
Single
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Polarity/Channel Type :
NPN
Package / Case :
TO-254-3, TO-254AA (Straight Leads)
Transistor Element Material :
SILICON
Max Power Dissipation :
6W
Reference Standard :
MIL-19500/510
Datasheets
JAN2N6251T1
Introducing Transistors - Bipolar (BJT) - Single Microsemi JAN2N6251T1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-65°C~200°C TJ, Number of Pins:3, Package / Case:TO-254-3, TO-254AA (Straight Leads), JAN2N6251T1 pinout, JAN2N6251T1 datasheet PDF, JAN2N6251T1 amp .Beyond Transistors - Bipolar (BJT) - Single Microsemi JAN2N6251T1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C~200°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-254-3, TO-254AA (Straight Leads) Bulk Through Hole

JAN2N6251T1 Overview


In this device, the DC current gain is 6 @ 10A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1.67A, 10A.Maximum collector currents can be below 10A volts.

JAN2N6251T1 Features


the DC current gain for this device is 6 @ 10A 3V
the vce saturation(Max) is 1.5V @ 1.67A, 10A


JAN2N6251T1 Applications


There are a lot of Microsemi Corporation
JAN2N6251T1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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