JAN2N6250T1

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Mfr.Part #
JAN2N6250T1
Manufacturer
Microsemi
Package / Case
TO-254-3, TO-254AA (Straight Leads)
Datasheet
Download
Description
TRANS NPN 275V 10A TO254AA
Stock
18,621
In Stock :
18,621

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Manufacturer :
Microsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Number of Elements :
1
Configuration :
Single
Radiation Hardening :
No
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Qualification Status :
Qualified
Current - Collector Cutoff (Max) :
1mA
Polarity/Channel Type :
NPN
Packaging :
Bulk
Transistor Type :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Current - Collector (Ic) (Max) :
10A
Operating Temperature :
-65°C~200°C TJ
RoHS Status :
Non-RoHS Compliant
Number of Pins :
3
Collector Base Voltage (VCBO) :
375V
Mount :
Through Hole
Max Collector Current :
10A
Pbfree Code :
No
HTS Code :
8541.29.00.95
Mounting Type :
Through Hole
Terminal Position :
Single
Terminal Form :
PIN/PEG
Published :
2007
ECCN Code :
EAR99
Max Power Dissipation :
6W
Pin Count :
3
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 1.25A, 10A
Series :
Military, MIL-PRF-19500/510
Package / Case :
TO-254-3, TO-254AA (Straight Leads)
Collector Emitter Voltage (VCEO) :
275V
DC Current Gain (hFE) (Min) @ Ic, Vce :
8 @ 10A 3V
Reference Standard :
MIL-19500/510
Datasheets
JAN2N6250T1
Introducing Transistors - Bipolar (BJT) - Single Microsemi JAN2N6250T1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-65°C~200°C TJ, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-254-3, TO-254AA (Straight Leads), JAN2N6250T1 pinout, JAN2N6250T1 datasheet PDF, JAN2N6250T1 amp .Beyond Transistors - Bipolar (BJT) - Single Microsemi JAN2N6250T1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C~200°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-254-3, TO-254AA (Straight Leads) Bulk Through Hole

JAN2N6250T1 Overview


In this device, the DC current gain is 8 @ 10A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1.25A, 10A.Maximum collector currents can be below 10A volts.

JAN2N6250T1 Features


the DC current gain for this device is 8 @ 10A 3V
the vce saturation(Max) is 1.5V @ 1.25A, 10A


JAN2N6250T1 Applications


There are a lot of Microsemi Corporation
JAN2N6250T1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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