JAN2N6250
- Mfr.Part #
- JAN2N6250
- Manufacturer
- Microsemi
- Package / Case
- TO-3
- Datasheet
- Download
- Description
- TRANS NPN 275V 10A TO3
- Stock
- 31,447
- In Stock :
- 31,447
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 1mA
- Collector Emitter Voltage (VCEO) :
- 275V
- Current - Collector (Ic) (Max) :
- 10A
- Transistor Type :
- NPN
- Configuration :
- Single
- Qualification Status :
- Qualified
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Max Power Dissipation :
- 6W
- Pin Count :
- 2
- Transistor Element Material :
- SILICON
- HTS Code :
- 8541.29.00.95
- Package / Case :
- TO-3
- JEDEC-95 Code :
- TO-204AA
- Series :
- Military, MIL-PRF-19500/510
- Collector Base Voltage (VCBO) :
- 375V
- Published :
- 2001
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 2
- RoHS Status :
- Non-RoHS Compliant
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1.25A, 10A
- Reference Standard :
- MIL-19500/510
- Packaging :
- Bulk
- Polarity/Channel Type :
- NPN
- Terminal Form :
- PIN/PEG
- Pbfree Code :
- No
- ECCN Code :
- EAR99
- Max Collector Current :
- 10A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 10A 3V
- Operating Temperature :
- -65°C~200°C TJ
- JESD-30 Code :
- O-MBFM-P2
- Datasheets
- JAN2N6250
NPN -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON NPN TO-3 Bulk Through Hole
JAN2N6250 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 8 @ 10A 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 1.25A, 10A.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.
JAN2N6250 Features
the DC current gain for this device is 8 @ 10A 3V
the vce saturation(Max) is 1.5V @ 1.25A, 10A
JAN2N6250 Applications
There are a lot of Microsemi Corporation
JAN2N6250 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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