JAN2N6211

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Mfr.Part #
JAN2N6211
Manufacturer
Microchip Technology
Package / Case
TO-213AA, TO-66-2
Datasheet
Download
Description
TRANS PNP 225V 2A TO66
Stock
3,876
In Stock :
3,876

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector (Ic) (Max) :
2A
Case Connection :
COLLECTOR
ECCN Code :
EAR99
JESD-609 Code :
e0
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
O-MBFM-P2
Mount :
Through Hole
Pbfree Code :
No
Terminal Finish :
Tin/Lead (Sn/Pb)
Configuration :
Single
Max Collector Current :
2A
Number of Pins :
3
Transistor Application :
SWITCHING
Collector Emitter Voltage (VCEO) :
225V
Current - Collector Cutoff (Max) :
5mA
HTS Code :
8541.29.00.95
Collector Base Voltage (VCBO) :
275V
Number of Terminations :
2
Operating Temperature :
-55°C~200°C TJ
Max Power Dissipation :
3W
Radiation Hardening :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 1A 5V
RoHS Status :
Non-RoHS Compliant
Polarity/Channel Type :
PNP
Transistor Type :
PNP
Lifecycle Status :
IN PRODUCTION (Last Updated: 3 weeks ago)
Terminal Position :
BOTTOM
Terminal Form :
PIN/PEG
Series :
Military, MIL-PRF-19500/461
Packaging :
Bulk
Number of Elements :
1
Reference Standard :
MIL-19500/461E
Mounting Type :
Through Hole
Pin Count :
3
Package / Case :
TO-213AA, TO-66-2
Qualification Status :
Qualified
Vce Saturation (Max) @ Ib, Ic :
1.4V @ 125mA, 1A
Datasheets
JAN2N6211
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N6211 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:2, Operating Temperature:-55°C~200°C TJ, Mounting Type:Through Hole, Package / Case:TO-213AA, TO-66-2, JAN2N6211 pinout, JAN2N6211 datasheet PDF, JAN2N6211 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N6211 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -55°C~200°C TJ 5mA 1 Elements 2 Terminations SILICON PNP TO-213AA, TO-66-2 Bulk Through Hole

JAN2N6211 Overview


In this device, the DC current gain is 30 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.4V @ 125mA, 1A.Maximum collector currents can be below 2A volts.

JAN2N6211 Features


the DC current gain for this device is 30 @ 1A 5V
the vce saturation(Max) is 1.4V @ 125mA, 1A


JAN2N6211 Applications


There are a lot of Microsemi Corporation
JAN2N6211 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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