JAN2N6051
- Mfr.Part #
- JAN2N6051
- Manufacturer
- Microchip Technology
- Package / Case
- TO-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 12A TO3
- Stock
- 3,891
- In Stock :
- 3,891
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- Non-RoHS Compliant
- Series :
- Military, MIL-PRF-19500/501
- Collector Base Voltage (VCBO) :
- 80V
- JESD-30 Code :
- O-MBFM-P2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Qualified
- JESD-609 Code :
- e0
- Mount :
- Through Hole
- Pbfree Code :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Power - Max :
- 150W
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 120mA, 12A
- Element Configuration :
- Single
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 1mA
- Terminal Position :
- BOTTOM
- Case Connection :
- COLLECTOR
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-3
- Polarity :
- PNP
- Current - Collector (Ic) (Max) :
- 12A
- ECCN Code :
- EAR99
- Contact Plating :
- Lead, Tin
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Collector Emitter Saturation Voltage :
- 3V
- Transistor Type :
- PNP - Darlington
- Number of Terminations :
- 2
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Pin Count :
- 2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 6A 3V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- PIN/PEG
- Transistor Element Material :
- SILICON
- Datasheets
- JAN2N6051
PNP - Darlington -55°C~175°C TJ 1mA 1 Elements 2 Terminations SILICON TO-3 Bulk Through Hole
JAN2N6051 Overview
This device has a DC current gain of 1000 @ 6A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 3V.A VCE saturation (Max) of 3V @ 120mA, 12A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.
JAN2N6051 Features
the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
JAN2N6051 Applications
There are a lot of Microsemi Corporation
JAN2N6051 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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