JAN2N5796A
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- Mfr.Part #
- JAN2N5796A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-78-6 Metal Can
- Datasheet
- Download
- Description
- NPN TRANSISTOR
- Stock
- 46,681
- In Stock ：
- 46,681
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Current - Collector (Ic) (Max) :
- 600mA
- Base Product Number :
- 2N5796
- Technology :
- Si
- Manufacturer :
- Microchip
- Frequency - Transition :
- -
- Product Status :
- Active
- Current - Collector Cutoff (Max) :
- 10μA (ICBO)
- Product Type :
- BJTs - Bipolar Transistors
- Package :
- Bulk
- Series :
- Military, MIL-PRF-19500/496
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Product Category :
- Bipolar Transistors - BJT
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Package / Case :
- TO-78-6 Metal Can
- Power - Max :
- 600mW
- Subcategory :
- Transistors
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Packaging :
- Bulk
- Transistor Type :
- 2 PNP (Dual)
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C ~ 175°C (TJ)
- Brand :
- Microchip / Microsemi
- RoHS :
- N
- Supplier Device Package :
- TO-78-6
- Datasheets
- JAN2N5796A
2 PNP (Dual) -65°C ~ 175°C (TJ) 10µA (ICBO) TO-78-6 Metal Can Bulk Through Hole
JAN2N5796A Overview
DC current gain in this device equals 100 @ 150mA, 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.6V @ 50mA, 500mA.Product comes in TO-78-6 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
JAN2N5796A Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the supplier device package of TO-78-6
JAN2N5796A Applications
There are a lot of Microchip
JAN2N5796A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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