JAN2N5682
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- Mfr.Part #
- JAN2N5682
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 120V 1A TO39
- Stock
- 32,565
- In Stock ：
- 32,565
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 1A
- Collector Base Voltage (VCBO) :
- 120V
- Emitter Base Voltage (VEBO) :
- 4V
- Contact Plating :
- Lead, Tin
- Pin Count :
- 2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 1W
- JESD-609 Code :
- e0
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 10μA
- Transistor Type :
- NPN
- Qualification Status :
- Qualified
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Published :
- 2002
- Transition Frequency :
- 30MHz
- Collector Emitter Voltage (VCEO) :
- 120V
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Packaging :
- Bulk
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 250mA 2V
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 22 Weeks
- Series :
- Military, MIL-PRF-19500/583
- RoHS Status :
- Non-RoHS Compliant
- Number of Elements :
- 1
- Pbfree Code :
- No
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~200°C TJ
- Terminal Form :
- Wire
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1W
- Configuration :
- Single
- Terminal Position :
- BOTTOM
- Datasheets
- JAN2N5682
NPN -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N5682 Overview
This device has a DC current gain of 40 @ 250mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.As you can see, the part has a transition frequency of 30MHz.A maximum collector current of 1A volts is possible.
JAN2N5682 Features
the DC current gain for this device is 40 @ 250mA 2V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 4V
a transition frequency of 30MHz
JAN2N5682 Applications
There are a lot of Microsemi Corporation
JAN2N5682 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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