JAN2N5667S
- Mfr.Part #
- JAN2N5667S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 300V 5A TO39
- Stock
- 1,330
- In Stock :
- 1,330
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1A, 5A
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 400V
- Mount :
- Through Hole
- Polarity/Channel Type :
- NPN
- Series :
- Military, MIL-PRF-19500/455
- Pin Count :
- 2
- Collector Emitter Voltage (VCEO) :
- 300V
- Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 5A
- JESD-609 Code :
- e0
- Current - Collector Cutoff (Max) :
- 200nA
- HTS Code :
- 8541.29.00.95
- Number of Terminations :
- 2
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -65°C~200°C TJ
- Max Power Dissipation :
- 1.2W
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Transistor Type :
- NPN
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Radiation Hardening :
- No
- Factory Lead Time :
- 22 Weeks
- Number of Pins :
- 3
- Published :
- 2007
- JEDEC-95 Code :
- TO-5
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Bulk
- Case Connection :
- COLLECTOR
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Number of Elements :
- 1
- JESD-30 Code :
- O-MBFM-P2
- Terminal Form :
- PIN/PEG
- Max Collector Current :
- 5A
- Pbfree Code :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 5V
- Reference Standard :
- MIL-19500/455E
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Qualification Status :
- Qualified
- Datasheets
- JAN2N5667S
NPN -65°C~200°C TJ 200nA 1 Elements 2 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N5667S Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 1A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 1A, 5A.During maximum operation, collector current can be as low as 5A volts.
JAN2N5667S Features
the DC current gain for this device is 25 @ 1A 5V
the vce saturation(Max) is 1V @ 1A, 5A
JAN2N5667S Applications
There are a lot of Microsemi Corporation
JAN2N5667S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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