JAN2N5667S

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Mfr.Part #
JAN2N5667S
Manufacturer
Microchip Technology
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
TRANS NPN 300V 5A TO39
Stock
1,330
In Stock :
1,330

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
1V @ 1A, 5A
Transistor Application :
SWITCHING
Collector Base Voltage (VCBO) :
400V
Mount :
Through Hole
Polarity/Channel Type :
NPN
Series :
Military, MIL-PRF-19500/455
Pin Count :
2
Collector Emitter Voltage (VCEO) :
300V
Configuration :
Single
Current - Collector (Ic) (Max) :
5A
JESD-609 Code :
e0
Current - Collector Cutoff (Max) :
200nA
HTS Code :
8541.29.00.95
Number of Terminations :
2
Terminal Position :
BOTTOM
Operating Temperature :
-65°C~200°C TJ
Max Power Dissipation :
1.2W
Package / Case :
TO-205AD, TO-39-3 Metal Can
Transistor Type :
NPN
Terminal Finish :
Tin/Lead (Sn/Pb)
Radiation Hardening :
No
Factory Lead Time :
22 Weeks
Number of Pins :
3
Published :
2007
JEDEC-95 Code :
TO-5
RoHS Status :
Non-RoHS Compliant
Packaging :
Bulk
Case Connection :
COLLECTOR
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Number of Elements :
1
JESD-30 Code :
O-MBFM-P2
Terminal Form :
PIN/PEG
Max Collector Current :
5A
Pbfree Code :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
25 @ 1A 5V
Reference Standard :
MIL-19500/455E
Mounting Type :
Through Hole
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Qualification Status :
Qualified
Datasheets
JAN2N5667S
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N5667S from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-65°C~200°C TJ, Package / Case:TO-205AD, TO-39-3 Metal Can, Number of Pins:3, Mounting Type:Through Hole, JAN2N5667S pinout, JAN2N5667S datasheet PDF, JAN2N5667S amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N5667S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C~200°C TJ 200nA 1 Elements 2 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole

JAN2N5667S Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 1A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 1A, 5A.During maximum operation, collector current can be as low as 5A volts.

JAN2N5667S Features


the DC current gain for this device is 25 @ 1A 5V
the vce saturation(Max) is 1V @ 1A, 5A


JAN2N5667S Applications


There are a lot of Microsemi Corporation
JAN2N5667S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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