JAN2N5666U3
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- Mfr.Part #
- JAN2N5666U3
- Manufacturer
- Microchip Technology
- Package / Case
- TO-276AA
- Datasheet
- Download
- Description
- TRANS NPN 200V 5A U-3
- Stock
- 1,970
- In Stock ：
- 1,970
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Technology :
- Si
- Product Type :
- BJTs - Bipolar Transistors
- Package / Case :
- TO-276AA
- RoHS :
- N
- Frequency - Transition :
- -
- Packaging :
- Bulk
- Current - Collector (Ic) (Max) :
- 5 A
- Current - Collector Cutoff (Max) :
- 200nA
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1A, 5A
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Brand :
- Microchip / Microsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1A, 5V
- Package :
- Bulk
- Voltage - Collector Emitter Breakdown (Max) :
- 200 V
- Power - Max :
- 1.2 W
- Subcategory :
- Transistors
- Product Status :
- Active
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- U-3 (TO-276AA)
- Base Product Number :
- 2N5666
- Manufacturer :
- Microchip
- Product Category :
- Bipolar Transistors - BJT
- Series :
- Military, MIL-PRF-19500/455
- Datasheets
- JAN2N5666U3
NPN -65°C ~ 200°C (TJ) 200nA TO-276AA Bulk Surface Mount
JAN2N5666U3 Overview
In this device, the DC current gain is 40 @ 1A, 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 1A, 5A.Product comes in the supplier's device package U-3 (TO-276AA).There is a 200 V maximal voltage in the device due to collector-emitter breakdown.
JAN2N5666U3 Features
the DC current gain for this device is 40 @ 1A, 5V
the vce saturation(Max) is 1V @ 1A, 5A
the supplier device package of U-3 (TO-276AA)
JAN2N5666U3 Applications
There are a lot of Microchip
JAN2N5666U3 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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