JAN2N5666
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- Mfr.Part #
- JAN2N5666
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 200V 5A TO5
- Stock
- 47,965
- In Stock ：
- 47,965
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 2
- Reach Compliance Code :
- not_compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Base Voltage (VCBO) :
- 250V
- Terminal Form :
- PIN/PEG
- Pin Count :
- 2
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Emitter Base Voltage (VEBO) :
- 6V
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1A 5V
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 5A
- Configuration :
- Single
- Factory Lead Time :
- 22 Weeks
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 200nA
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5A, 1A
- Packaging :
- Bulk
- Power Dissipation :
- 1.2W
- Published :
- 2007
- Series :
- Military, MIL-PRF-19500/455
- Qualification Status :
- Qualified
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e0
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Type :
- NPN
- Pbfree Code :
- No
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 200V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Terminal Position :
- BOTTOM
- RoHS Status :
- Non-RoHS Compliant
- JESD-30 Code :
- O-MBFM-P2
- Max Power Dissipation :
- 1.2W
- Contact Plating :
- Lead, Tin
- Datasheets
- JAN2N5666
NPN -65°C~200°C TJ 200nA 1 Elements 2 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N5666 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 1A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 5A, 1A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Collector current can be as low as 5A volts at its maximum.
JAN2N5666 Features
the DC current gain for this device is 40 @ 1A 5V
the vce saturation(Max) is 1V @ 5A, 1A
the emitter base voltage is kept at 6V
JAN2N5666 Applications
There are a lot of Microsemi Corporation
JAN2N5666 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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