JAN2N5665
- Mfr.Part #
- JAN2N5665
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS NPN 300V 5A TO66
- Stock
- 30,787
- In Stock :
- 30,787
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 2
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Current - Collector Cutoff (Max) :
- 200nA
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 2.5W
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 400V
- Packaging :
- Bulk
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-213AA, TO-66-2
- Published :
- 2007
- Terminal Position :
- BOTTOM
- Pbfree Code :
- No
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 5V
- Operating Temperature :
- -65°C~200°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1A, 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Terminal Form :
- PIN/PEG
- Case Connection :
- COLLECTOR
- Transistor Type :
- NPN
- Max Collector Current :
- 5A
- Polarity/Channel Type :
- NPN
- Configuration :
- Single
- RoHS Status :
- Non-RoHS Compliant
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 300V
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- O-MBFM-P2
- Series :
- Military, MIL-PRF-19500/455
- Power Dissipation :
- 2.5W
- Qualification Status :
- Qualified
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Contact Plating :
- Lead, Tin
- Factory Lead Time :
- 22 Weeks
- Datasheets
- JAN2N5665
NPN -65°C~200°C TJ 200nA 1 Elements 2 Terminations SILICON NPN TO-213AA, TO-66-2 Bulk Through Hole
JAN2N5665 Overview
This device has a DC current gain of 25 @ 1A 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.The maximum collector current is 5A volts.
JAN2N5665 Features
the DC current gain for this device is 25 @ 1A 5V
the vce saturation(Max) is 1V @ 1A, 5A
the emitter base voltage is kept at 6V
JAN2N5665 Applications
There are a lot of Microsemi Corporation
JAN2N5665 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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