JAN2N5663
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- Mfr.Part #
- JAN2N5663
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 300V 2A TO5
- Stock
- 17,177
- In Stock ：
- 17,177
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- JESD-609 Code :
- e0
- Qualification Status :
- Qualified
- Factory Lead Time :
- 22 Weeks
- Case Connection :
- COLLECTOR
- Published :
- 2007
- Pbfree Code :
- No
- Mounting Type :
- Through Hole
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Collector Base Voltage (VCBO) :
- 400V
- Operating Temperature :
- -65°C~200°C TJ
- Number of Elements :
- 1
- Pin Count :
- 3
- Terminal Form :
- Wire
- Packaging :
- Bulk
- Collector Emitter Voltage (VCEO) :
- 300V
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Element Material :
- SILICON
- Series :
- Military, MIL-PRF-19500/454
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 400mA, 2A
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 500mA 5V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Pins :
- 3
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 2A
- Current - Collector Cutoff (Max) :
- 200nA
- Number of Terminations :
- 3
- Turn On Time-Max (ton) :
- 250ns
- Max Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Configuration :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Terminal Position :
- BOTTOM
- Power Dissipation :
- 1W
- Datasheets
- JAN2N5663
NPN -65°C~200°C TJ 200nA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N5663 Overview
In this device, the DC current gain is 25 @ 500mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 400mA, 2A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
JAN2N5663 Features
the DC current gain for this device is 25 @ 500mA 5V
the vce saturation(Max) is 800mV @ 400mA, 2A
the emitter base voltage is kept at 6V
JAN2N5663 Applications
There are a lot of Microsemi Corporation
JAN2N5663 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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