JAN2N5581
- Mfr.Part #
- JAN2N5581
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO46
- Stock
- 46,728
- In Stock :
- 46,728
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Turn Off Time-Max (toff) :
- 300ns
- Reference Standard :
- MIL-19500/423E
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- Non-RoHS Compliant
- Turn On Time-Max (ton) :
- 35ns
- Transistor Element Material :
- SILICON
- HTS Code :
- 8541.21.00.95
- Current - Collector (Ic) (Max) :
- 800mA
- Packaging :
- Bulk
- JESD-30 Code :
- O-MBCY-W3
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Terminal Position :
- BOTTOM
- Published :
- 2002
- Qualification Status :
- Qualified
- Configuration :
- Single
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~200°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- JESD-609 Code :
- e0
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 500mW
- Collector Emitter Voltage (VCEO) :
- 50V
- Contact Plating :
- Lead, Tin
- Series :
- Military, MIL-PRF-19500/423
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- Collector Base Voltage (VCBO) :
- 75V
- Transistor Type :
- NPN
- Terminal Form :
- Wire
- Max Collector Current :
- 800mA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 23 Weeks
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Pin Count :
- 3
- Pbfree Code :
- No
- Datasheets
- JAN2N5581
NPN -55°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-206AB, TO-46-3 Metal Can Bulk Through Hole
JAN2N5581 Overview
This device has a DC current gain of 40 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A maximum collector current of 800mA volts is possible.
JAN2N5581 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
JAN2N5581 Applications
There are a lot of Microsemi Corporation
JAN2N5581 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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