JAN2N5416UA
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- Mfr.Part #
- JAN2N5416UA
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 300V 1A TO5
- Stock
- 5,709
- In Stock ：
- 5,709
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 1A
- Terminal Position :
- Dual
- Mounting Type :
- Through Hole
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 5mA, 50mA
- Series :
- Military, MIL-PRF-19500/485
- Packaging :
- Bulk
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Turn Off Time-Max (toff) :
- 10000ns
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 22 Weeks
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Voltage - Collector Emitter Breakdown (Max) :
- 300V
- Qualification Status :
- Qualified
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- -65°C~200°C TJ
- Turn On Time-Max (ton) :
- 1000ns
- Number of Terminations :
- 4
- JESD-609 Code :
- e0
- Pbfree Code :
- No
- Current - Collector Cutoff (Max) :
- 1mA
- Transistor Application :
- SWITCHING
- Power - Max :
- 750mW
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Pins :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 10V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Published :
- 2007
- Configuration :
- Single
- Datasheets
- JAN2N5416UA
PNP -65°C~200°C TJ 1mA 1 Elements 4 Terminations SILICON PNP TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N5416UA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 5mA, 50mA.This device displays a 300V maximum voltage - Collector Emitter Breakdown.
JAN2N5416UA Features
the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
JAN2N5416UA Applications
There are a lot of Microsemi Corporation
JAN2N5416UA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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