JAN2N5416S

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Vce Saturation (Max) @ Ib, Ic :

2V @ 5mA, 50mA

Lead Free :

Contains Lead

Configuration :

Single

HTS Code :

8541.21.00.95

Mount :

Through Hole

Published :

2007

Current - Collector Cutoff (Max) :

1mA

Current - Collector (Ic) (Max) :

1A

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Turn On Time-Max (ton) :

1000ns

Terminal Finish :

Tin/Lead (Sn/Pb)

Operating Temperature :

-65°C~200°C TJ

Pin Count :

3

Collector Emitter Voltage (VCEO) :

300V

Terminal Position :

BOTTOM

JESD-30 Code :

O-MBCY-W4

Qualification Status :

Qualified

Number of Terminations :

4

Number of Pins :

3

Number of Elements :

1

ECCN Code :

EAR99

Transistor Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reference Standard :

MIL-19500/485H

Polarity/Channel Type :

PNP

Factory Lead Time :

22 Weeks

Radiation Hardening :

No

Turn Off Time-Max (toff) :

10000ns

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 50mA 10V

Packaging :

Bulk

Max Power Dissipation :

750mW

Terminal Form :

Wire

JEDEC-95 Code :

TO-5

Pbfree Code :

No

RoHS Status :

Non-RoHS Compliant

Max Collector Current :

1A

Case Connection :

COLLECTOR

Package / Case :

TO-205AD, TO-39-3 Metal Can

Series :

Military, MIL-PRF-19500/485

Transistor Element Material :

SILICON

JESD-609 Code :

e0

Collector Base Voltage (VCBO) :

350V