JAN2N5415S
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- Mfr.Part #
- JAN2N5415S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 200V 1A TO39
- Stock
- 44,645
- In Stock ：
- 44,645
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- No
- Qualification Status :
- Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 5mA, 50mA
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Configuration :
- Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 200V
- Current - Collector Cutoff (Max) :
- 1mA
- Terminal Position :
- BOTTOM
- Series :
- Military, MIL-PRF-19500/485
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 4
- Packaging :
- Bulk
- Operating Temperature :
- -65°C~200°C TJ
- Published :
- 2002
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Power Dissipation :
- 750mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 200V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 10V
- JESD-30 Code :
- O-MBCY-W4
- Max Collector Current :
- 1A
- JEDEC-95 Code :
- TO-5
- RoHS Status :
- Non-RoHS Compliant
- Radiation Hardening :
- No
- Terminal Form :
- Wire
- Pin Count :
- 3
- Mount :
- Through Hole
- JESD-609 Code :
- e0
- Max Power Dissipation :
- 750mW
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 22 Weeks
- Number of Elements :
- 1
- Datasheets
- JAN2N5415S
PNP -65°C~200°C TJ 1mA 1 Elements 4 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N5415S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 50mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 1A volts.
JAN2N5415S Features
the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 6V
JAN2N5415S Applications
There are a lot of Microsemi Corporation
JAN2N5415S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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