JAN2N5415
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- Mfr.Part #
- JAN2N5415
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 200V 1A TO5
- Stock
- 1,463
- In Stock ：
- 1,463
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e0
- Factory Lead Time :
- 22 Weeks
- Qualification Status :
- Qualified
- Current - Collector Cutoff (Max) :
- 1mA
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Terminal Form :
- Wire
- JESD-30 Code :
- O-MBCY-W4
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 10V
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 200V
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 5mA, 50mA
- Power Dissipation :
- 750mW
- Radiation Hardening :
- No
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Packaging :
- Bulk
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Series :
- Military, MIL-PRF-19500/485
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Pbfree Code :
- No
- Configuration :
- Single
- Max Collector Current :
- 1A
- Mount :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -65°C~200°C TJ
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 4
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-5
- Collector Base Voltage (VCBO) :
- 200V
- Published :
- 2002
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 750mW
- Datasheets
- JAN2N5415
PNP -65°C~200°C TJ 1mA 1 Elements 4 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N5415S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 50mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 1A volts.
JAN2N5415S Features
the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 6V
JAN2N5415S Applications
There are a lot of Microsemi Corporation
JAN2N5415S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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