JAN2N5339U3

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Mfr.Part #
JAN2N5339U3
Manufacturer
Microchip Technology
Package / Case
TO-276AA
Datasheet
Download
Description
TRANS NPN 100V 100UA U-3
Stock
38,206
In Stock :
38,206

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Supplier Device Package :
U-3 (TO-276AA)
JESD-30 Code :
R-XBCC-N3
Transistor Application :
SWITCHING
Series :
Military, MIL-PRF-19500/560
Voltage - Collector Emitter Breakdown (Max) :
100 V
Package / Case :
TO-276AA
Pin Count :
5
RoHS :
N
Terminal Position :
BOTTOM
Current - Collector (Ic) (Max) :
100 µA
Collector-Emitter Voltage-Max :
100 V
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 2A, 2V
Continuous Collector Current :
5 A
Minimum Operating Temperature :
- 65 C
Power - Max :
1 W
Maximum Operating Temperature :
+ 200 C
DC Current Gain-Min (hFE) :
40
Number of Elements :
1
Reference Standard :
MIL-19500/560
Qualification Status :
Qualified
Surface Mount :
yes
Frequency - Transition :
-
JEDEC-95 Code :
TO-276AA
Vce Saturation (Max) @ Ib, Ic :
1.2V @ 500mA, 5A
HTS Code :
8541.29.00.95
Collector Current-Max (IC) :
5 A
Terminal Form :
NO LEAD
Case Connection :
COLLECTOR
Transistor Polarity :
NPN
Transistor Type :
NPN
Configuration :
Single
Mounting Type :
Surface Mount
Number of Terminals :
3
Product Status :
Active
Transistor Element Material :
SILICON
Reach Compliance Code :
Compliant
Mounting Style :
SMD/SMT
Package :
Bulk
Packaging :
Tray
Package Shape :
RECTANGULAR
ECCN Code :
EAR99
Current - Collector Cutoff (Max) :
100μA
Polarity/Channel Type :
NPN
Operating Temperature :
-65°C ~ 200°C (TJ)
Datasheets
JAN2N5339U3
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N5339U3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-276AA, Mounting Type:Surface Mount, Operating Temperature:-65°C ~ 200°C (TJ), JAN2N5339U3 pinout, JAN2N5339U3 datasheet PDF, JAN2N5339U3 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N5339U3 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C ~ 200°C (TJ) 100µA 1 Elements SILICON NPN TO-276AA Tray Surface Mount

JAN2N5339U3 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 2A, 2V.When VCE saturation is 1.2V @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 5 A for high efficiency.Supplier package U-3 (TO-276AA) contains the product.Voltage maximal between collector and emitter is set to 100 V.The device has a 100 V maximal voltage - Collector Emitter Breakdown.

JAN2N5339U3 Features


the DC current gain for this device is 60 @ 2A, 2V
the vce saturation(Max) is 1.2V @ 500mA, 5A
the supplier device package of U-3 (TO-276AA)


JAN2N5339U3 Applications


There are a lot of Microchip
JAN2N5339U3 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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