JAN2N5339
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- Mfr.Part #
- JAN2N5339
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 100V 5A TO39
- Stock
- 44,245
- In Stock ：
- 44,245
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 2A 2V
- Number of Elements :
- 1
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 500mA, 5A
- Turn Off Time-Max (toff) :
- 2200ns
- Power Dissipation :
- 1W
- Terminal Form :
- Wire
- Number of Pins :
- 3
- Operating Temperature :
- -65°C~200°C TJ
- Collector Base Voltage (VCBO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2007
- Polarity/Channel Type :
- NPN
- RoHS Status :
- Non-RoHS Compliant
- Factory Lead Time :
- 22 Weeks
- Current - Collector Cutoff (Max) :
- 100μA
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Turn On Time-Max (ton) :
- 200ns
- Mount :
- Through Hole
- Max Collector Current :
- 5A
- Mounting Type :
- Through Hole
- Qualification Status :
- Qualified
- Emitter Base Voltage (VEBO) :
- 6V
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Series :
- Military, MIL-PRF-19500/560
- Transistor Application :
- SWITCHING
- Pbfree Code :
- No
- Number of Terminations :
- 3
- Max Power Dissipation :
- 1W
- Packaging :
- Bulk
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Collector Emitter Voltage (VCEO) :
- 100V
- JESD-609 Code :
- e0
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Position :
- BOTTOM
- Datasheets
- JAN2N5339
NPN -65°C~200°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N5339 Overview
In this device, the DC current gain is 60 @ 2A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 500mA, 5A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
JAN2N5339 Features
the DC current gain for this device is 60 @ 2A 2V
the vce saturation(Max) is 1.2V @ 500mA, 5A
the emitter base voltage is kept at 6V
JAN2N5339 Applications
There are a lot of Microsemi Corporation
JAN2N5339 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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