JAN2N5237S
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- Mfr.Part #
- JAN2N5237S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 120V 10A TO39
- Stock
- 3,960
- In Stock ：
- 3,960
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Turn On Time-Max (ton) :
- 550ns
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Power Dissipation :
- 1W
- Factory Lead Time :
- 22 Weeks
- Emitter Base Voltage (VEBO) :
- 10V
- Transistor Type :
- NPN
- Pin Count :
- 2
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 1A, 10A
- Number of Terminations :
- 3
- Operating Temperature :
- -65°C~200°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 5A 5V
- Polarity/Channel Type :
- NPN
- Series :
- Military, MIL-PRF-19500/394
- Pbfree Code :
- No
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 150V
- Collector Emitter Voltage (VCEO) :
- 120V
- Turn Off Time-Max (toff) :
- 2000ns
- Published :
- 2007
- Mount :
- Through Hole
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 1W
- Configuration :
- Single
- Terminal Position :
- BOTTOM
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Current - Collector Cutoff (Max) :
- 10μA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Radiation Hardening :
- No
- JEDEC-95 Code :
- TO-5
- Max Collector Current :
- 10A
- Qualification Status :
- Qualified
- Terminal Form :
- Wire
- JESD-609 Code :
- e0
- Datasheets
- JAN2N5237S
NPN -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N5237S Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 5A 5V.When VCE saturation is 2.5V @ 1A, 10A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 10V can achieve high levels of efficiency.A maximum collector current of 10A volts can be achieved.
JAN2N5237S Features
the DC current gain for this device is 40 @ 5A 5V
the vce saturation(Max) is 2.5V @ 1A, 10A
the emitter base voltage is kept at 10V
JAN2N5237S Applications
There are a lot of Microsemi Corporation
JAN2N5237S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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