JAN2N5237
- Mfr.Part #
- JAN2N5237
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 120V 10A TO5
- Stock
- 47,438
- In Stock :
- 47,438
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Operating Temperature :
- -65°C~200°C TJ
- Packaging :
- Bulk
- Number of Elements :
- 1
- Qualification Status :
- Qualified
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 1A, 10A
- Turn Off Time-Max (toff) :
- 2000ns
- Collector Base Voltage (VCBO) :
- 150V
- Polarity/Channel Type :
- NPN
- Series :
- Military, MIL-PRF-19500/394
- RoHS Status :
- Non-RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 5A 5V
- Power Dissipation :
- 1W
- Emitter Base Voltage (VEBO) :
- 10V
- Current - Collector Cutoff (Max) :
- 10μA
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Radiation Hardening :
- No
- Published :
- 2007
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- Turn On Time-Max (ton) :
- 550ns
- Max Collector Current :
- 10A
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 120V
- ECCN Code :
- EAR99
- Pbfree Code :
- No
- Configuration :
- Single
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Type :
- NPN
- Max Power Dissipation :
- 1W
- Pin Count :
- 2
- Factory Lead Time :
- 22 Weeks
- Terminal Form :
- Wire
- Mount :
- Through Hole
- Datasheets
- JAN2N5237
NPN -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N5237 Overview
This device has a DC current gain of 40 @ 5A 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 2.5V @ 1A, 10A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.A maximum collector current of 10A volts is possible.
JAN2N5237 Features
the DC current gain for this device is 40 @ 5A 5V
the vce saturation(Max) is 2.5V @ 1A, 10A
the emitter base voltage is kept at 10V
JAN2N5237 Applications
There are a lot of Microsemi Corporation
JAN2N5237 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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