JAN2N5153
- Mfr.Part #
- JAN2N5153
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 80V 2A TO39
- Stock
- 39,516
- In Stock :
- 39,516
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Wire
- Emitter Base Voltage (VEBO) :
- 5.5V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 50μA
- Operating Temperature :
- -65°C~200°C TJ
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 5A
- Terminal Position :
- BOTTOM
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 100V
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Configuration :
- Single
- Pin Count :
- 4
- Transition Frequency :
- 70MHz
- Power Dissipation :
- 1W
- Max Power Dissipation :
- 1W
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 2.5A 5V
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Collector Current :
- 2A
- Series :
- Military, MIL-PRF-19500/545
- Number of Terminations :
- 3
- Qualification Status :
- Qualified
- Pbfree Code :
- No
- RoHS Status :
- Non-RoHS Compliant
- Turn On Time-Max (ton) :
- 500ns
- Datasheets
- JAN2N5153
PNP -65°C~200°C TJ 50μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N5153 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 70 @ 2.5A 5V.When VCE saturation is 1.5V @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5.5V can achieve high levels of efficiency.In the part, the transition frequency is 70MHz.A maximum collector current of 2A volts can be achieved.
JAN2N5153 Features
the DC current gain for this device is 70 @ 2.5A 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the emitter base voltage is kept at 5.5V
a transition frequency of 70MHz
JAN2N5153 Applications
There are a lot of Microsemi Corporation
JAN2N5153 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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