JAN2N5152
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- Mfr.Part #
- JAN2N5152
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 2A TO39
- Stock
- 21,710
- In Stock ：
- 21,710
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Max Power Dissipation :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 5A
- Qualification Status :
- Qualified
- Max Collector Current :
- 2A
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Mount :
- Through Hole
- Terminal Position :
- BOTTOM
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time :
- 22 Weeks
- JESD-609 Code :
- e0
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C~200°C TJ
- Packaging :
- Bulk
- Terminal Form :
- Wire
- Collector Emitter Voltage (VCEO) :
- 80V
- Published :
- 2007
- RoHS Status :
- Non-RoHS Compliant
- Current - Collector Cutoff (Max) :
- 50μA
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 100V
- Power Dissipation :
- 1W
- JEDEC-95 Code :
- TO-5
- Emitter Base Voltage (VEBO) :
- 5.5V
- Series :
- Military, MIL-PRF-19500/544
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 2.5A 5V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Terminations :
- 3
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Reference Standard :
- MIL
- Datasheets
- JAN2N5152
NPN -65°C~200°C TJ 50μA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N5152 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 2.5A 5V.When VCE saturation is 1.5V @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5.5V can achieve high levels of efficiency.A maximum collector current of 2A volts can be achieved.
JAN2N5152 Features
the DC current gain for this device is 30 @ 2.5A 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the emitter base voltage is kept at 5.5V
JAN2N5152 Applications
There are a lot of Microsemi Corporation
JAN2N5152 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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