JAN2N5151
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- Mfr.Part #
- JAN2N5151
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 80V 2A TO39
- Stock
- 10,865
- In Stock ：
- 10,865
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 22 Weeks
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 1W
- Terminal Form :
- Wire
- RoHS Status :
- Non-RoHS Compliant
- Radiation Hardening :
- No
- Max Collector Current :
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 2.5A 5V
- Published :
- 2007
- Turn On Time-Max (ton) :
- 500ns
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 80V
- JESD-609 Code :
- e0
- Operating Temperature :
- -65°C~200°C TJ
- Number of Terminations :
- 3
- Series :
- Military, MIL-PRF-19500/545
- Transition Frequency :
- 60MHz
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 50μA
- Pbfree Code :
- No
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Transistor Type :
- PNP
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5.5V
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 5A
- Qualification Status :
- Qualified
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 4
- Terminal Position :
- BOTTOM
- Configuration :
- Single
- Mount :
- Through Hole
- Number of Pins :
- 3
- Power Dissipation :
- 1W
- Datasheets
- JAN2N5151
PNP -65°C~200°C TJ 50μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N5151 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 2.5A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 500mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5.5V.Parts of this part have transition frequencies of 60MHz.During maximum operation, collector current can be as low as 2A volts.
JAN2N5151 Features
the DC current gain for this device is 30 @ 2.5A 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the emitter base voltage is kept at 5.5V
a transition frequency of 60MHz
JAN2N5151 Applications
There are a lot of Microsemi Corporation
JAN2N5151 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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