JAN2N5038
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- Mfr.Part #
- JAN2N5038
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 90V 20A TO3
- Stock
- 48,442
- In Stock ：
- 48,442
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Terminal Position :
- BOTTOM
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1.2A, 12A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 2A 5V
- Operating Temperature :
- -65°C~200°C TJ
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Pin Count :
- 2
- Published :
- 2002
- Mounting Type :
- Through Hole
- Pbfree Code :
- No
- Mount :
- Through Hole
- Transistor Type :
- NPN
- JESD-609 Code :
- e0
- Radiation Hardening :
- No
- JESD-30 Code :
- O-MBFM-P2
- Terminal Form :
- PIN/PEG
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Max Collector Current :
- 20A
- ECCN Code :
- EAR99
- Factory Lead Time :
- 20 Weeks
- Power Dissipation :
- 140W
- Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 1μA
- Series :
- Military, MIL-PRF-19500/439
- Number of Pins :
- 3
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Emitter Base Voltage (VEBO) :
- 7V
- Qualification Status :
- Qualified
- Max Power Dissipation :
- 140W
- Collector Base Voltage (VCBO) :
- 150V
- Collector Emitter Voltage (VCEO) :
- 90V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Packaging :
- Bulk
- RoHS Status :
- Non-RoHS Compliant
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-204AA, TO-3
- Case Connection :
- COLLECTOR
- Datasheets
- JAN2N5038
NPN -65°C~200°C TJ 1μA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Bulk Through Hole
JAN2N5038 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 2A 5V.When VCE saturation is 1V @ 1.2A, 12A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.A maximum collector current of 20A volts can be achieved.
JAN2N5038 Features
the DC current gain for this device is 50 @ 2A 5V
the vce saturation(Max) is 1V @ 1.2A, 12A
the emitter base voltage is kept at 7V
JAN2N5038 Applications
There are a lot of Microsemi Corporation
JAN2N5038 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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