JAN2N5015

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Mfr.Part #
JAN2N5015
Manufacturer
Microsemi
Package / Case
TO-205AA, TO-5-3 Metal Can
Datasheet
Download
Description
TRANS NPN 1000V 0.2A TO5
Stock
46,588
In Stock :
46,588

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Manufacturer :
Microsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2007
Moisture Sensitivity Level (MSL) :
Not Applicable
RoHS Status :
Non-RoHS Compliant
Package / Case :
TO-205AA, TO-5-3 Metal Can
Voltage - Collector Emitter Breakdown (Max) :
1000V
Current - Collector Cutoff (Max) :
10nA ICBO
Series :
Military, MIL-PRF-19500/727
Mounting Type :
Through Hole
Current - Collector (Ic) (Max) :
200mA
Transistor Type :
NPN
Operating Temperature :
-65°C~200°C TJ
Power - Max :
1W
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 20mA 10V
Packaging :
Bulk
Supplier Device Package :
TO-5
Datasheets
JAN2N5015
Introducing Transistors - Bipolar (BJT) - Single Microsemi JAN2N5015 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-205AA, TO-5-3 Metal Can, Mounting Type:Through Hole, Operating Temperature:-65°C~200°C TJ, JAN2N5015 pinout, JAN2N5015 datasheet PDF, JAN2N5015 amp .Beyond Transistors - Bipolar (BJT) - Single Microsemi JAN2N5015 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microsemi JAN2N5015


NPN -65°C~200°C TJ 10nA ICBO TO-205AA, TO-5-3 Metal Can Bulk Through Hole

JAN2N5015 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 20mA 10V.TO-5 is the supplier device package for this product.This device displays a 1000V maximum voltage - Collector Emitter Breakdown.

JAN2N5015 Features


the DC current gain for this device is 30 @ 20mA 10V
the supplier device package of TO-5


JAN2N5015 Applications


There are a lot of Microsemi Corporation
JAN2N5015 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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