JAN2N5014S
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- Mfr.Part #
- JAN2N5014S
- Manufacturer
- Microsemi
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 900V 0.2A TO39
- Stock
- 40,355
- In Stock ：
- 40,355
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Packaging :
- Bulk
- RoHS Status :
- Non-RoHS Compliant
- Current - Collector (Ic) (Max) :
- 200mA
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 20mA 10V
- Operating Temperature :
- -65°C~200°C TJ
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Voltage - Collector Emitter Breakdown (Max) :
- 900V
- Supplier Device Package :
- TO-39 (TO-205AD)
- Power - Max :
- 1W
- Mounting Type :
- Through Hole
- Series :
- Military, MIL-PRF-19500/727
- Published :
- 2007
- Datasheets
- JAN2N5014S
NPN -65°C~200°C TJ 10nA ICBO TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N5014S Overview
This device has a DC current gain of 30 @ 20mA 10V, which is the ratio between the collector current and the base current.Single BJT transistor comes in a supplier device package of TO-39 (TO-205AD).Detection of Collector Emitter Breakdown at 900V maximal voltage is present.
JAN2N5014S Features
the DC current gain for this device is 30 @ 20mA 10V
the supplier device package of TO-39 (TO-205AD)
JAN2N5014S Applications
There are a lot of Microsemi Corporation
JAN2N5014S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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