JAN2N5014

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Mfr.Part #
JAN2N5014
Manufacturer
Microsemi
Package / Case
TO-205AA, TO-5-3 Metal Can
Datasheet
Download
Description
TRANS NPN 900V 0.2A TO5
Stock
48,464
In Stock :
48,464

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Manufacturer :
Microsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Supplier Device Package :
TO-5
Voltage - Collector Emitter Breakdown (Max) :
900V
Moisture Sensitivity Level (MSL) :
Not Applicable
RoHS Status :
Non-RoHS Compliant
Mounting Type :
Through Hole
Power - Max :
1W
Current - Collector Cutoff (Max) :
10nA ICBO
Series :
Military, MIL-PRF-19500/727
Transistor Type :
NPN
Packaging :
Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 20mA 10V
Published :
2007
Operating Temperature :
-65°C~200°C TJ
Current - Collector (Ic) (Max) :
200mA
Package / Case :
TO-205AA, TO-5-3 Metal Can
Datasheets
JAN2N5014
Introducing Transistors - Bipolar (BJT) - Single Microsemi JAN2N5014 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-65°C~200°C TJ, Package / Case:TO-205AA, TO-5-3 Metal Can, JAN2N5014 pinout, JAN2N5014 datasheet PDF, JAN2N5014 amp .Beyond Transistors - Bipolar (BJT) - Single Microsemi JAN2N5014 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microsemi JAN2N5014


NPN -65°C~200°C TJ 10nA ICBO TO-205AA, TO-5-3 Metal Can Bulk Through Hole

JAN2N5014 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 20mA 10V.This product comes in a TO-5 device package from the supplier.Device displays Collector Emitter Breakdown (900V maximal voltage).

JAN2N5014 Features


the DC current gain for this device is 30 @ 20mA 10V
the supplier device package of TO-5


JAN2N5014 Applications


There are a lot of Microsemi Corporation
JAN2N5014 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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