JAN2N5012S
- Mfr.Part #
- JAN2N5012S
- Manufacturer
- Microsemi
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 700V 0.2A TO39
- Stock
- 29,371
- In Stock :
- 29,371
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~200°C TJ
- Series :
- Military, MIL-PRF-19500/727
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 700V
- Max Collector Current :
- 200mA
- Power - Max :
- 1W
- Current - Collector (Ic) (Max) :
- 200mA
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 700V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Number of Pins :
- 3
- Max Operating Temperature :
- 200°C
- Max Power Dissipation :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 25mA 10V
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Published :
- 2007
- Radiation Hardening :
- No
- Lifecycle Status :
- Obsolete (Last Updated: 1 month ago)
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Supplier Device Package :
- TO-39 (TO-205AD)
- Min Operating Temperature :
- -65°C
- Datasheets
- JAN2N5012S

NPN -65°C~200°C TJ 10nA ICBO TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N5012S Overview
In this device, the DC current gain is 30 @ 25mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Supplier device package TO-39 (TO-205AD) comes with the product.The device exhibits a collector-emitter breakdown at 700V.Maximum collector currents can be below 200mA volts.
JAN2N5012S Features
the DC current gain for this device is 30 @ 25mA 10V
the supplier device package of TO-39 (TO-205AD)
JAN2N5012S Applications
There are a lot of Microsemi Corporation
JAN2N5012S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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