JAN2N5012
- Mfr.Part #
- JAN2N5012
- Manufacturer
- Microsemi
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 700V 0.2A TO5
- Stock
- 7,989
- In Stock :
- 7,989
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-5
- Power - Max :
- 1W
- Lifecycle Status :
- Obsolete (Last Updated: 1 month ago)
- Max Power Dissipation :
- 1W
- Min Operating Temperature :
- -65°C
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 25mA 10V
- Series :
- Military, MIL-PRF-19500/727
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Max Collector Current :
- 200mA
- Operating Temperature :
- -65°C~200°C TJ
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Collector Base Voltage (VCBO) :
- 700V
- Number of Pins :
- 3
- Max Operating Temperature :
- 200°C
- Voltage - Collector Emitter Breakdown (Max) :
- 700V
- Packaging :
- Bulk
- RoHS Status :
- Non-RoHS Compliant
- Published :
- 2007
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Current - Collector (Ic) (Max) :
- 200mA
- Datasheets
- JAN2N5012

NPN -65°C~200°C TJ 10nA ICBO TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N5012 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 25mA 10V.The product comes in the supplier device package of TO-5.A 700V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 200mA volts at its maximum.
JAN2N5012 Features
the DC current gain for this device is 30 @ 25mA 10V
the supplier device package of TO-5
JAN2N5012 Applications
There are a lot of Microsemi Corporation
JAN2N5012 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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