JAN2N5004
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- Mfr.Part #
- JAN2N5004
- Manufacturer
- Microchip Technology
- Package / Case
- TO-210AA, TO-59-4, Stud
- Datasheet
- Download
- Description
- TRANS NPN 80V 5A TO59
- Stock
- 38,002
- In Stock ：
- 38,002
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Mounting Type :
- Stud Mount
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mount :
- Stud
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5.5V
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Pbfree Code :
- No
- Max Collector Current :
- 10A
- Collector Emitter Voltage (VCEO) :
- 80V
- Package / Case :
- TO-210AA, TO-59-4, Stud
- Number of Terminations :
- 3
- Terminal Form :
- Solder Lug
- Factory Lead Time :
- 22 Weeks
- Current - Collector (Ic) (Max) :
- 5A
- Qualification Status :
- Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 5A
- Polarity/Channel Type :
- NPN
- Published :
- 2007
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Case Connection :
- Isolated
- Max Power Dissipation :
- 2W
- Current - Collector Cutoff (Max) :
- 50μA
- RoHS Status :
- Non-RoHS Compliant
- Series :
- Military, MIL-PRF-19500/534
- Operating Temperature :
- -65°C~200°C TJ
- Packaging :
- Bulk
- JESD-609 Code :
- e0
- Power Dissipation :
- 2W
- Terminal Position :
- UPPER
- Collector Base Voltage (VCBO) :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 2.5A 5V
- Configuration :
- Single
- Pin Count :
- 3
- Datasheets
- JAN2N5004
NPN -65°C~200°C TJ 50μA 1 Elements 3 Terminations SILICON NPN TO-210AA, TO-59-4, Stud Bulk Stud Mount
JAN2N5004 Overview
This device has a DC current gain of 70 @ 2.5A 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.5V @ 500mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5.5V.A maximum collector current of 10A volts is possible.
JAN2N5004 Features
the DC current gain for this device is 70 @ 2.5A 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the emitter base voltage is kept at 5.5V
JAN2N5004 Applications
There are a lot of Microsemi Corporation
JAN2N5004 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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