JAN2N4449
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- Mfr.Part #
- JAN2N4449
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 20V TO46
- Stock
- 19,083
- In Stock ：
- 19,083
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 360mW
- Operating Temperature :
- -65°C~200°C TJ
- Collector Base Voltage (VCBO) :
- 40V
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 400nA
- Reference Standard :
- MIL-19500
- Published :
- 2007
- Voltage - Collector Emitter Breakdown (Max) :
- 20V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- RoHS Status :
- Non-RoHS Compliant
- Max Power Dissipation :
- 600mW
- Qualification Status :
- Qualified
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Terminal Position :
- BOTTOM
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e0
- HTS Code :
- 8541.21.00.95
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Factory Lead Time :
- 23 Weeks
- Series :
- Military, MIL-PRF-19500/317
- Transistor Element Material :
- SILICON
- Pbfree Code :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 10mA, 100mA
- Terminal Form :
- Wire
- Transistor Application :
- SWITCHING
- Turn On Time-Max (ton) :
- 12ns
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 15V
- Packaging :
- Bulk
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 100mA 1V
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Turn Off Time-Max (toff) :
- 18ns
- Configuration :
- Single
- Datasheets
- JAN2N4449
NPN -65°C~200°C TJ 400nA 1 Elements 3 Terminations SILICON NPN TO-206AB, TO-46-3 Metal Can Bulk Through Hole
JAN2N4449 Overview
This device has a DC current gain of 20 @ 100mA 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 20V maximal voltage is present.
JAN2N4449 Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
JAN2N4449 Applications
There are a lot of Microsemi Corporation
JAN2N4449 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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