JAN2N4261UB
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- Mfr.Part #
- JAN2N4261UB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS PNP 15V 0.03A UB
- Stock
- 31,788
- In Stock ：
- 31,788
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- Non-RoHS Compliant
- Factory Lead Time :
- 23 Weeks
- Package / Case :
- 3-SMD, No Lead
- Number of Pins :
- 3
- Configuration :
- Single
- Turn On Time-Max (ton) :
- 2.5ns
- Mount :
- Surface Mount
- JESD-30 Code :
- R-CDSO-N4
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Series :
- Military, MIL-PRF-19500/511
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Reference Standard :
- MIL-19500/511
- Max Collector Current :
- 30mA
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Power - Max :
- 200mW
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 1mA, 10mA
- Max Power Dissipation :
- 200mW
- HTS Code :
- 8541.21.00.95
- Number of Terminations :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~200°C TJ
- Collector Emitter Voltage (VCEO) :
- 15V
- Number of Elements :
- 1
- Qualification Status :
- Qualified
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 15V
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA 1V
- Datasheets
- JAN2N4261UB
PNP -65°C~200°C TJ 10μA ICBO 1 Elements 4 Terminations SILICON PNP 3-SMD, No Lead Bulk Surface Mount
JAN2N4261UB Overview
In this device, the DC current gain is 30 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 1mA, 10mA.Maximum collector currents can be below 30mA volts.
JAN2N4261UB Features
the DC current gain for this device is 30 @ 10mA 1V
the vce saturation(Max) is 350mV @ 1mA, 10mA
JAN2N4261UB Applications
There are a lot of Microsemi Corporation
JAN2N4261UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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