JAN2N4261
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- Mfr.Part #
- JAN2N4261
- Manufacturer
- Microchip Technology
- Package / Case
- TO-72-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 15V 0.03A TO72
- Stock
- 40,889
- In Stock ：
- 40,889
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e0
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 1mA, 10mA
- Collector-Base Capacitance-Max :
- 2.5pF
- Pbfree Code :
- No
- Max Power Dissipation :
- 200mW
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 15V
- Reference Standard :
- MIL-19500/511
- Radiation Hardening :
- No
- Pin Count :
- 4
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 23 Weeks
- Number of Elements :
- 1
- Series :
- Military, MIL-PRF-19500/511
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Qualified
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA 1V
- Operating Temperature :
- -65°C~200°C TJ
- Mount :
- Through Hole
- Number of Terminations :
- 4
- Package / Case :
- TO-72-3 Metal Can
- Published :
- 2007
- Power - Max :
- 200mW
- Configuration :
- Single
- Terminal Finish :
- TIN LEAD
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Packaging :
- Bulk
- Collector Base Voltage (VCBO) :
- 15V
- HTS Code :
- 8541.21.00.95
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Terminal Form :
- Wire
- Terminal Position :
- BOTTOM
- JESD-30 Code :
- O-MBCY-W4
- RoHS Status :
- Non-RoHS Compliant
- Number of Pins :
- 3
- Max Collector Current :
- 30mA
- Datasheets
- JAN2N4261
PNP -65°C~200°C TJ 10μA ICBO 1 Elements 4 Terminations SILICON PNP TO-72-3 Metal Can Bulk Through Hole
JAN2N4261 Overview
DC current gain in this device equals 30 @ 10mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 350mV @ 1mA, 10mA.In extreme cases, the collector current can be as low as 30mA volts.
JAN2N4261 Features
the DC current gain for this device is 30 @ 10mA 1V
the vce saturation(Max) is 350mV @ 1mA, 10mA
JAN2N4261 Applications
There are a lot of Microsemi Corporation
JAN2N4261 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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