JAN2N4239
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- Mfr.Part #
- JAN2N4239
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A TO39
- Stock
- 47,481
- In Stock ：
- 47,481
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- HTS Code :
- 8541.29.00.95
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Published :
- 2002
- Operating Temperature :
- -65°C~200°C TJ
- Packaging :
- Bulk
- Series :
- Military, MIL-PRF-19500/581
- JESD-609 Code :
- e0
- Configuration :
- Single
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Pbfree Code :
- No
- Current - Collector (Ic) (Max) :
- 1A
- JESD-30 Code :
- O-MBCY-W3
- Number of Elements :
- 1
- Transition Frequency :
- 1MHz
- Factory Lead Time :
- 22 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 250mA 1V
- RoHS Status :
- Non-RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Reference Standard :
- MIL-19500/581
- Power - Max :
- 1W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- Wire
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Power Dissipation-Max (Abs) :
- 0.8W
- Datasheets
- JAN2N4239
NPN -65°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N4239 Overview
In this device, the DC current gain is 30 @ 250mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.1MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 80V.
JAN2N4239 Features
the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
a transition frequency of 1MHz
JAN2N4239 Applications
There are a lot of Microsemi Corporation
JAN2N4239 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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