JAN2N4238
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- Mfr.Part #
- JAN2N4238
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A TO39
- Stock
- 46,091
- In Stock ：
- 46,091
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2002
- Packaging :
- Bulk
- Reference Standard :
- MIL-19500/581
- Transistor Type :
- NPN
- Transition Frequency :
- 1MHz
- Terminal Form :
- Wire
- Current - Collector (Ic) (Max) :
- 1A
- Pbfree Code :
- No
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Series :
- Military, MIL-PRF-19500/581
- Operating Temperature :
- -65°C~200°C TJ
- Qualification Status :
- Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 250mA 1V
- JESD-30 Code :
- O-MBCY-W3
- Number of Elements :
- 1
- HTS Code :
- 8541.29.00.95
- JESD-609 Code :
- e0
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- Non-RoHS Compliant
- Power Dissipation-Max (Abs) :
- 0.8W
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Polarity/Channel Type :
- NPN
- Power - Max :
- 1W
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Factory Lead Time :
- 22 Weeks
- Datasheets
- JAN2N4238
NPN -65°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N4238 Overview
In this device, the DC current gain is 30 @ 250mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.1MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 60V.
JAN2N4238 Features
the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
a transition frequency of 1MHz
JAN2N4238 Applications
There are a lot of Microsemi Corporation
JAN2N4238 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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