JAN2N4237
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- Mfr.Part #
- JAN2N4237
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A TO39
- Stock
- 42,892
- In Stock ：
- 42,892
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 22 Weeks
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- O-MBCY-W3
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Transition Frequency :
- 1MHz
- Power Dissipation-Max (Abs) :
- 0.8W
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- -65°C~200°C TJ
- Reference Standard :
- MIL-19500/581
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Terminal Position :
- BOTTOM
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e0
- Pbfree Code :
- No
- Power - Max :
- 1W
- Qualification Status :
- Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2002
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 250mA 1V
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Type :
- NPN
- Terminal Form :
- Wire
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Current - Collector (Ic) (Max) :
- 1A
- Series :
- Military, MIL-PRF-19500/581
- HTS Code :
- 8541.29.00.95
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- Non-RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Configuration :
- Single
- Datasheets
- JAN2N4237
NPN -65°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N4237 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 250mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 100mA, 1A.The part has a transition frequency of 1MHz.Device displays Collector Emitter Breakdown (40V maximal voltage).
JAN2N4237 Features
the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
a transition frequency of 1MHz
JAN2N4237 Applications
There are a lot of Microsemi Corporation
JAN2N4237 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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