JAN2N4150

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Mfr.Part #
JAN2N4150
Manufacturer
Microchip Technology
Package / Case
TO-205AA, TO-5-3 Metal Can
Datasheet
Download
Description
TRANS NPN 70V 10A TO5
Stock
41,848
In Stock :
41,848

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Packaging :
Bulk
Qualification Status :
Qualified
Polarity/Channel Type :
NPN
Turn On Time-Max (ton) :
550ns
Number of Terminations :
3
Pin Count :
3
Emitter Base Voltage (VEBO) :
10V
Series :
Military, MIL-PRF-19500/394
Max Power Dissipation :
1W
Terminal Finish :
Tin/Lead (Sn/Pb)
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 1A, 10A
Published :
2007
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Max Collector Current :
10A
Transistor Type :
NPN
Transistor Application :
SWITCHING
Power Dissipation :
1W
Mounting Type :
Through Hole
RoHS Status :
Non-RoHS Compliant
Turn Off Time-Max (toff) :
2000ns
Number of Pins :
3
Terminal Form :
Wire
Factory Lead Time :
22 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-65°C~200°C TJ
Number of Elements :
1
Collector Base Voltage (VCBO) :
100V
Case Connection :
COLLECTOR
Package / Case :
TO-205AA, TO-5-3 Metal Can
Collector Emitter Voltage (VCEO) :
70V
Current - Collector Cutoff (Max) :
10μA
Radiation Hardening :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 5A 5V
JESD-609 Code :
e0
Mount :
Through Hole
Configuration :
Single
Terminal Position :
BOTTOM
Pbfree Code :
No
Datasheets
JAN2N4150
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N4150 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-65°C~200°C TJ, Package / Case:TO-205AA, TO-5-3 Metal Can, JAN2N4150 pinout, JAN2N4150 datasheet PDF, JAN2N4150 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N4150 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology JAN2N4150


NPN -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole

JAN2N4150 Overview


In this device, the DC current gain is 40 @ 5A 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 1A, 10A.With the emitter base voltage set at 10V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.

JAN2N4150 Features


the DC current gain for this device is 40 @ 5A 5V
the vce saturation(Max) is 2.5V @ 1A, 10A
the emitter base voltage is kept at 10V


JAN2N4150 Applications


There are a lot of Microsemi Corporation
JAN2N4150 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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