JAN2N4150
- Mfr.Part #
- JAN2N4150
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 70V 10A TO5
- Stock
- 41,848
- In Stock :
- 41,848
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Qualification Status :
- Qualified
- Polarity/Channel Type :
- NPN
- Turn On Time-Max (ton) :
- 550ns
- Number of Terminations :
- 3
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 10V
- Series :
- Military, MIL-PRF-19500/394
- Max Power Dissipation :
- 1W
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 1A, 10A
- Published :
- 2007
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Max Collector Current :
- 10A
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 1W
- Mounting Type :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Turn Off Time-Max (toff) :
- 2000ns
- Number of Pins :
- 3
- Terminal Form :
- Wire
- Factory Lead Time :
- 22 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~200°C TJ
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 100V
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Collector Emitter Voltage (VCEO) :
- 70V
- Current - Collector Cutoff (Max) :
- 10μA
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 5A 5V
- JESD-609 Code :
- e0
- Mount :
- Through Hole
- Configuration :
- Single
- Terminal Position :
- BOTTOM
- Pbfree Code :
- No
- Datasheets
- JAN2N4150
NPN -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N4150 Overview
In this device, the DC current gain is 40 @ 5A 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 1A, 10A.With the emitter base voltage set at 10V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
JAN2N4150 Features
the DC current gain for this device is 40 @ 5A 5V
the vce saturation(Max) is 2.5V @ 1A, 10A
the emitter base voltage is kept at 10V
JAN2N4150 Applications
There are a lot of Microsemi Corporation
JAN2N4150 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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