JAN2N3960

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

400mW

Polarity/Channel Type :

NPN

JESD-609 Code :

e0

Collector Emitter Voltage (VCEO) :

12V

Operating Temperature :

-65°C~200°C TJ

Mount :

Through Hole

Power - Max :

400mW

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

300mV @ 3mA, 30mA

Series :

Military, MIL-PRF-19500/399

Terminal Position :

BOTTOM

Terminal Form :

Wire

Transistor Element Material :

SILICON

Terminal Finish :

TIN LEAD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN

Packaging :

Bulk

Case Connection :

COLLECTOR

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 1V

Package / Case :

TO-206AA, TO-18-3 Metal Can

Configuration :

Single

HTS Code :

8541.21.00.95

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

20V

Pin Count :

3

Pbfree Code :

No

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

10μA ICBO

Number of Pins :

3

Mounting Type :

Through Hole

Published :

2007

RoHS Status :

Non-RoHS Compliant