JAN2N3868S
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- Mfr.Part #
- JAN2N3868S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.003A TO39
- Stock
- 9,365
- In Stock ：
- 9,365
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 22 Weeks
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 250mA, 2.5A
- Terminal Position :
- BOTTOM
- Collector Base Voltage (VCBO) :
- 60V
- Turn Off Time-Max (toff) :
- 600ns
- Packaging :
- Bulk
- Series :
- Military, MIL-PRF-19500/350
- Transistor Type :
- PNP
- Max Collector Current :
- 3A
- Terminal Form :
- Wire
- Pbfree Code :
- No
- Collector Emitter Voltage (VCEO) :
- 60V
- ECCN Code :
- EAR99
- RoHS Status :
- Non-RoHS Compliant
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Qualification Status :
- Qualified
- Pin Count :
- 2
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 1.5A 2V
- Published :
- 2007
- Max Power Dissipation :
- 1W
- Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- JESD-609 Code :
- e0
- Power Dissipation :
- 1W
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 4V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -65°C~200°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- JAN2N3868S
PNP -65°C~200°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3868S Overview
This device has a DC current gain of 30 @ 1.5A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 4V to achieve high efficiency.The maximum collector current is 3A volts.
JAN2N3868S Features
the DC current gain for this device is 30 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 4V
JAN2N3868S Applications
There are a lot of Microsemi Corporation
JAN2N3868S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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