JAN2N3868
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- Mfr.Part #
- JAN2N3868
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.003A TO5
- Stock
- 26,947
- In Stock ：
- 26,947
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 4V
- Power Dissipation :
- 1W
- Published :
- 2007
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 250mA, 2.5A
- Max Collector Current :
- 3A
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Pin Count :
- 2
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 60V
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Series :
- Military, MIL-PRF-19500/350
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- ECCN Code :
- EAR99
- Qualification Status :
- Qualified
- Case Connection :
- COLLECTOR
- Terminal Form :
- Wire
- Radiation Hardening :
- No
- JESD-609 Code :
- e0
- Number of Pins :
- 3
- Pbfree Code :
- No
- Operating Temperature :
- -65°C~200°C TJ
- Max Power Dissipation :
- 1W
- Factory Lead Time :
- 22 Weeks
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 1.5A 2V
- Turn Off Time-Max (toff) :
- 600ns
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- Datasheets
- JAN2N3868
PNP -65°C~200°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3868S Overview
This device has a DC current gain of 30 @ 1.5A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 4V to achieve high efficiency.The maximum collector current is 3A volts.
JAN2N3868S Features
the DC current gain for this device is 30 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 4V
JAN2N3868S Applications
There are a lot of Microsemi Corporation
JAN2N3868S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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