JAN2N3867S
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- Mfr.Part #
- JAN2N3867S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.003A TO39
- Stock
- 25,703
- In Stock ：
- 25,703
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Mount :
- Through Hole
- Max Power Dissipation :
- 1W
- JESD-609 Code :
- e0
- Pbfree Code :
- No
- Number of Terminations :
- 3
- Turn Off Time-Max (toff) :
- 600ns
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Pin Count :
- 2
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 250mA, 2.5A
- RoHS Status :
- Non-RoHS Compliant
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Operating Temperature :
- -65°C~200°C TJ
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 4V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Packaging :
- Bulk
- Factory Lead Time :
- 22 Weeks
- Collector Base Voltage (VCBO) :
- 40V
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Series :
- Military, MIL-PRF-19500/350
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1.5A 2V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Form :
- Wire
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Qualification Status :
- Qualified
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Collector Current :
- 3A
- Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- JAN2N3867S
PNP -65°C~200°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3867S Overview
This device has a DC current gain of 40 @ 1.5A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 4V to achieve high efficiency.The maximum collector current is 3A volts.
JAN2N3867S Features
the DC current gain for this device is 40 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 4V
JAN2N3867S Applications
There are a lot of Microsemi Corporation
JAN2N3867S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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