JAN2N3867P
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- Mfr.Part #
- JAN2N3867P
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 38,013
- In Stock ：
- 38,013
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS :
- N
- Frequency - Transition :
- -
- Package :
- Bulk
- Voltage - Collector Emitter Breakdown (Max) :
- 40 V
- Product Category :
- Microchip Technology
- Brand :
- Microchip / Microsemi
- Operating Temperature :
- -55°C ~ 200°C
- Manufacturer :
- Microchip
- Power - Max :
- 1 W
- Current - Collector Cutoff (Max) :
- 1μA
- Mounting Type :
- Through Hole
- Transistor Type :
- PNP
- Series :
- Military, MIL-PRF-19500/350
- Product Status :
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA, 1V
- Current - Collector (Ic) (Max) :
- 3 A
- Supplier Device Package :
- TO-5AA
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 250mA, 2.5A
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Datasheets
- JAN2N3867P
PNP -55°C ~ 200°C 1μA TO-205AA, TO-5-3 Metal Can Through Hole
JAN2N3867P Overview
This device has a DC current gain of 50 @ 500mA, 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-5AA.Detection of Collector Emitter Breakdown at 40 V maximal voltage is present.
JAN2N3867P Features
the DC current gain for this device is 50 @ 500mA, 1V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the supplier device package of TO-5AA
JAN2N3867P Applications
There are a lot of Microchip Technology
JAN2N3867P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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