JAN2N3867
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- Mfr.Part #
- JAN2N3867
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.003A TO5
- Stock
- 40,871
- In Stock ：
- 40,871
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 40V
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Number of Pins :
- 3
- Operating Temperature :
- -65°C~200°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1.5A 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Military, MIL-PRF-19500/350
- Configuration :
- Single
- Power Dissipation :
- 1W
- Turn Off Time-Max (toff) :
- 600ns
- Case Connection :
- COLLECTOR
- RoHS Status :
- Non-RoHS Compliant
- Terminal Form :
- Wire
- Qualification Status :
- Qualified
- Max Collector Current :
- 3A
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 1W
- Pbfree Code :
- No
- Emitter Base Voltage (VEBO) :
- 4V
- Packaging :
- Bulk
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Voltage (VCEO) :
- 40V
- JESD-609 Code :
- e0
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Pin Count :
- 2
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 250mA, 2.5A
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- ECCN Code :
- EAR99
- Factory Lead Time :
- 22 Weeks
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Datasheets
- JAN2N3867
PNP -65°C~200°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3867S Overview
This device has a DC current gain of 40 @ 1.5A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 4V to achieve high efficiency.The maximum collector current is 3A volts.
JAN2N3867S Features
the DC current gain for this device is 40 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 4V
JAN2N3867S Applications
There are a lot of Microsemi Corporation
JAN2N3867S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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