JAN2N3810L

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

Configuration :

SEPARATE, 2 ELEMENTS

Collector Emitter Voltage (VCEO) :

250mV

Reference Standard :

MIL-19500

Terminal Form :

Wire

Packaging :

Bulk

Collector Emitter Breakdown Voltage :

60V

Max Power Dissipation :

350mW

Pin Count :

8

Radiation Hardening :

No

Factory Lead Time :

23 Weeks

Polarity/Channel Type :

PNP

Number of Elements :

2

Mount :

Through Hole

Published :

2007

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 1mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

HTS Code :

8541.21.00.95

Operating Temperature :

-65°C~200°C TJ

Current - Collector Cutoff (Max) :

10μA ICBO

Mounting Type :

Through Hole

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-78-6 Metal Can

Power - Max :

350mW

Pbfree Code :

No

Collector Base Voltage (VCBO) :

60V

Number of Pins :

6

JESD-609 Code :

e0

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

ECCN Code :

EAR99

Terminal Finish :

Tin/Lead (Sn/Pb)

Terminal Position :

BOTTOM

Max Collector Current :

50mA

Transistor Type :

2 PNP (Dual)

Qualification Status :

Qualified

Number of Terminations :

6

Series :

Military, MIL-PRF-19500/336