JAN2N3767
- Mfr.Part #
- JAN2N3767
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS NPN 80V 4A TO66
- Stock
- 30,258
- In Stock :
- 30,258
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Max Power Dissipation :
- 25W
- Operating Temperature :
- -65°C~200°C TJ
- Package / Case :
- TO-213AA, TO-66-2
- JESD-609 Code :
- e0
- Published :
- 2002
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Reference Standard :
- MIL-19500/518C
- Max Collector Current :
- 4A
- Configuration :
- Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA 5V
- Current - Collector Cutoff (Max) :
- 500μA
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Elements :
- 1
- Current - Collector (Ic) (Max) :
- 4A
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 22 Weeks
- Pin Count :
- 3
- Mount :
- Through Hole
- JESD-30 Code :
- O-MBFM-P2
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 100mA, 1A
- Number of Pins :
- 3
- Qualification Status :
- Qualified
- Number of Terminations :
- 2
- Transition Frequency :
- 10MHz
- Transistor Application :
- SWITCHING
- Pbfree Code :
- No
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 100V
- Series :
- Military, MIL-PRF-19500/518
- Case Connection :
- COLLECTOR
- Terminal Form :
- PIN/PEG
- Datasheets
- JAN2N3767
NPN -65°C~200°C TJ 500μA 1 Elements 2 Terminations SILICON NPN TO-213AA, TO-66-2 Bulk Surface Mount
JAN2N3767 Overview
This device has a DC current gain of 40 @ 500mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 2.5V @ 100mA, 1A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 10MHz.A maximum collector current of 4A volts is possible.
JAN2N3767 Features
the DC current gain for this device is 40 @ 500mA 5V
the vce saturation(Max) is 2.5V @ 100mA, 1A
a transition frequency of 10MHz
JAN2N3767 Applications
There are a lot of Microsemi Corporation
JAN2N3767 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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